Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12μCcm−2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300°C s...

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Published inJournal of the European Ceramic Society Vol. 37; no. 3; pp. 1135 - 1139
Main Authors Lin, Bo-Ting, Lu, Yu-Wei, Shieh, Jay, Chen, Miin-Jang
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2017
Subjects
Atomic layer deposition
Ferroelectricity
TEM
Thin films
Zirconia
Zirconia
Thin films
Ferroelectricity
Atomic layer deposition
TEM
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Summary:Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12μCcm−2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300°C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc21 in the as-deposited ZrO2 thin films was confirmed by high-resolution transmission electron microscopy.
ISSN:0955-2219
1873-619X
DOI:10.1016/j.jeurceramsoc.2016.10.028