In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance...

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Published inMicron (Oxford, England : 1993) Vol. 41; no. 4; pp. 301 - 305
Main Authors Gao, Peng, Wang, Zhenzhong, Fu, Wangyang, Liao, Zhaoliang, Liu, Kaihui, Wang, Wenlong, Bai, Xuedong, Wang, Enge
Format Journal Article
LanguageEnglish
Published England Elsevier Ltd 01.06.2010
Subjects
Cations
CeO 2
Cerium oxide
Data storage
Electric fields
Fluorite
In situ TEM
Microscopic mechanism
Migration
Oxides
Oxygen vacancy migration
Resistance change effect
Rutile
CeO 2
Oxygen vacancy migration
Resistance change effect
Microscopic mechanism
In situ TEM
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Summary:Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance switching effect in cerium oxides. The structure change during oxygen vacancy migration in CeO 2 induced by electric field was in situ imaged inside high-resolution transmission electron microscope, which gives a direct evidence for oxygen migration mechanism for the microscopic origin of resistance change effect in CeO 2. Our results have implications for understanding the nature of resistance change in metal oxides with mixed valence cations, such as fluorite, rutile and perovskite oxides.
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ISSN:0968-4328
1878-4291
DOI:10.1016/j.micron.2009.11.010