Deformation of small volumes of material using nanostructured strained layered superlattices

A key aspect of nanostructured materials is that large coherency strains can readily exist between nano-sized phases. This can result in strengthening or in improved ductility. However, in conventional materials, it can be very difficult to separate the effects of coherency strain from other phenome...

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Bibliographic Details
Published inMaterials science and technology Vol. 20; no. 8; pp. 996 - 998
Main Authors Png, K.M.Y., Bushby, A.J., Dunstan, D.J.
Format Journal Article
LanguageEnglish
Published London, England Taylor & Francis 01.08.2004
SAGE Publications
Taylor & Francis Ltd
Subjects
BEND TESTS
Deformation
Ductility
LAYERED SUPERLATTICES
Nanostructured materials
NANOSTRUCTURES
SEMICONDUCTORS
Substrates
NANOSTRUCTURES
BEND TESTS
SEMICONDUCTORS
LAYERED SUPERLATTICES
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Summary:A key aspect of nanostructured materials is that large coherency strains can readily exist between nano-sized phases. This can result in strengthening or in improved ductility. However, in conventional materials, it can be very difficult to separate the effects of coherency strain from other phenomena. Electronic grade single crystal semiconductor structures provide a means to study the effects of coherency strain in isolation. In this work, thin coherently strained InGaAs superlattices grown on thick InP substrates were tested in three-point bending at 500°C. The stress-strain curves of the specimens were measured, and from them, analysis yields the actual stress supported by the thin superlattice. The superlattices display extraordinary strength compared to the corresponding bulk material. This effect can be attributed only to the coherency strain in the superlattices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0267-0836
1743-2847
DOI:10.1179/026708304225016770