Synthesis of fluorinated graphene oxide by using an easy one-pot deoxyfluorination reaction

• Published in: Journal of colloid and interface science Vol. 524; pp. 219 - 226
• Main Authors: Aguilar-Bolados, Héctor, Contreras-Cid, Ahirton, Yazdani-Pedram, Mehrdad, Acosta-Villavicencio, Gabriela, Flores, Marcos, Fuentealba, Pablo, Neira-Carrillo, Andrónico, Verdejo, Raquel, López-Manchado, Miguel A.
• Format: Journal Article
• Language: English
• Published: United States Elsevier Inc 15.08.2018
• Subjects: Band gap energy; Deoxyfluorination reaction; Fluorinated graphene oxide; Reconstruction of Csp2 structure; Band gap energy; Fluorinated graphene oxide; Deoxyfluorination reaction; Reconstruction of Csp2 structure; Reconstruction of Csp structure
• ISSN: 0021-9797; 1095-7103
• DOI: 10.1016/j.jcis.2018.04.030

[Display omitted] The fluorination of two types of graphene oxides conducted by an easy and scalable deoxyfluorination reaction is reported. This reaction was carried out using diethylaminodifluorosulfinium tetrafluoroborate, a stable compound and an efficient reagent for replacing oxygenated functional groups of graphene oxide by fluoride. The graphene oxide produced by the Hummers’ method (GOH) showed lower reactivity than that produced by the Brodie’s method (GOB). X-ray photoelectron spectroscopy indicated that the highest fluorination degree achieved was 4.7 at.% when GOB was used, and the CF character corresponds to semi-ionic bonds. Additionally, a partial reduction of GO was concomitant with the functionalization reaction. The deoxyfluorination reaction changed the crystalline structure of GO, favoring the reconstruction of Csp2 structure of the graphene lattice and reducing the number of stacked layers. The fluorination led to the modification of the electronic band structure of this material, increasing the band gap from 2.05 eV for GOB to 3.88 eV for fluorinated GOB, while for GOH the low flurionation led to a slight increase of the band gap, from 3.48 eV to 3.57 eV.