Linear magnetoresistance in a topological insulator Ru2Sn3

We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while it becomes metallic below 160 K. Nonlinear field dependence of Hall resisti...

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Bibliographic Details
Published inAIP advances Vol. 7; no. 3; pp. 035011 - 035011-6
Main Authors Shiomi, Y., Saitoh, E.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.03.2017
AIP Publishing LLC
Subjects
Crystal growth
Electrical resistivity
Electronic structure
Magnetic fields
Magnetic properties
Magnetoresistance
Magnetoresistivity
Single crystals
Temperature
Temperature dependence
Transport properties
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Summary:We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while it becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallic region shows conduction of multiple carriers at low temperatures. In the high-temperature semiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-field dependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearly linear with magnetic fields, signaling a linear dispersion in the low-temperature electronic structure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicate that bulk electron carriers are responsible mainly for the observed linear magnetoresistance.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4978773