Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

• Published in: AIP advances Vol. 7; no. 1; pp. 015210 - 015210-10
• Main Authors: Preziosi, Daniele, Sander, Anke, Barthélémy, Agnès, Bibes, Manuel
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.01.2017; AIP Publishing LLC
• Subjects: Electrical resistivity; Film growth; Nickel; Pulsed laser deposition; Pulsed lasers; Rare earth elements; Reproducibility; Stoichiometry; Thin films; X ray spectra
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4975307

Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.