Reduction of bulk and surface recombination in GaAs for improved solar cell performance

• Published in: IEEE electron device letters Vol. 11; no. 7; pp. 321 - 323
• Main Authors: Wong, D., Schlesinger, T.E., Milnes, A.G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.1990; Institute of Electrical and Electronics Engineers
• Subjects: 140501 - Solar Energy Conversion- Photovoltaic Conversion; AMPLIFICATION; Annealing; Applied sciences; Costs; CURRENTS; DIFFUSION; DIRECT ENERGY CONVERTERS; ELECTRIC CURRENTS; ELEMENTS; Energy; Epitaxial growth; Exact sciences and technology; FABRICATION; GAIN; Gallium arsenide; GALLIUM ARSENIDE SOLAR CELLS; MATERIALS; METALS; N-TYPE CONDUCTORS; Natural energy; PASSIVATION; Photoconductivity; PHOTOCURRENTS; PHOTOELECTRIC CELLS; Photonic band gap; PHOTOVOLTAIC CELLS; Photovoltaic conversion; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS; Solar cells. Photoelectrochemical cells; SOLAR ENERGY; SOLAR EQUIPMENT; Substrates; Surface waves; TECHNOLOGY ASSESSMENT; ZINC; Solar cell; Gallium Arsenides; Minority carrier; N type conductivity; Photoelectric current; Recombination center; Diffusion length
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.56488

A technique for suppressing recombination centers and increasing minority-carrier diffusion lengths in bulk n-type GaAs is described. It is shown that such pretreatment of the material leads to substantially improved long-wavelength photocurrent collection in Zn-diffused solar cells fabricated directly in the bulk substrates. Passivation of the front surface of the cells with ammonium sulfide improves their short-wavelength photoresponse. These results suggest the possibility of realizing high-efficiency GaAs solar cells fabricated without the use of costly epitaxial technology.< >