A novel parametric-effect MEMS amplifier

This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a...

Full description

Saved in:
Bibliographic Details
Published inJournal of microelectromechanical systems Vol. 9; no. 4; pp. 528 - 537
Main Authors Raskin, J.-P., Brown, A.R., Khuri-Yakub, B., Rebeiz, G.M.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.2000
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Online AccessGet full text

Cover

Loading…
Abstract This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 /spl Omega/. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the and of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200/spl deg/C-600/spl deg/C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems.
AbstractList The application areas are in amplifiers which operate at very high temperatures (200°C-600°C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 Omicron. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the and of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200 deg C-600 deg C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 ohms. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the Q of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200-600 C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or l /f noise problems. (Author)
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 Omega . A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect of the series resistance and the Q of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200 degree C-600 degree C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or I/f noise problems.
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 /spl Omega/. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the and of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200/spl deg/C-600/spl deg/C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems.
This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 Omega . A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the and of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200 degree C-600 degree C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems
Author Rebeiz, G.M.
Raskin, J.-P.
Brown, A.R.
Khuri-Yakub, B.
Author_xml – sequence: 1
  givenname: J.-P.
  surname: Raskin
  fullname: Raskin, J.-P.
  organization: Microelectron. Lab., Univ. Catholique de Louvain, Belgium
– sequence: 2
  givenname: A.R.
  surname: Brown
  fullname: Brown, A.R.
– sequence: 3
  givenname: B.
  surname: Khuri-Yakub
  fullname: Khuri-Yakub, B.
– sequence: 4
  givenname: G.M.
  surname: Rebeiz
  fullname: Rebeiz, G.M.
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=856920$$DView record in Pascal Francis
BookMark eNqN0UtLAzEQB_AgFWyrB6-eioKPw9bMbp7HUuoDWjyo5yWbncCW7W5NWsFvb8oWBQ_qJQnkN3-YmQHpNW2DhJwCHQNQfavYWGkhJT8gfdAMEgpc9eKbcplI4PKIDEJYUgqMKdEn15NR075jPVobb1a48ZVN0Dm0m9FitngemdW6rlyF_pgcOlMHPNnfQ_J6N3uZPiTzp_vH6WSeWMbVJgEsuTWOS0lVBqViFLLCQQoItIDUGQOl4YJxw01R6gILXWRUKSsss2AxG5KrLnft27cthk2-qoLFujYNttuQa2CCQzz_lJIJqiHN0igvf5WpUlQIyf8Bmcgy-AeUIiotIzz_AZft1jdxgrETrTWTgkZ00yHr2xA8unztq5XxHznQfLfWXLG8W2u0F_tAE6ypnTeNrcJXgeJCp7vEs05ViPj92UV8AisNp2w
CODEN JMIYET
CitedBy_id crossref_primary_10_1063_1_4995564
crossref_primary_10_1038_nature10628
crossref_primary_10_1088_0960_1317_13_5_323
crossref_primary_10_1016_S1007_5704_02_00005_9
crossref_primary_10_1109_JMEMS_2006_883581
crossref_primary_10_1115_1_2980382
crossref_primary_10_1016_j_ijleo_2021_167755
crossref_primary_10_1088_0960_1317_19_1_015021
crossref_primary_10_1109_TCSII_2003_822427
crossref_primary_10_1007_s00542_013_2034_2
crossref_primary_10_1016_j_elstat_2015_05_015
crossref_primary_10_1115_1_4001333
crossref_primary_10_1115_1_4053635
crossref_primary_10_1007_s11071_007_9308_0
crossref_primary_10_1016_j_metmat_2008_03_003
crossref_primary_10_31590_ejosat_792956
crossref_primary_10_1007_s00542_020_04827_4
crossref_primary_10_1063_1_4721282
crossref_primary_10_1016_S0924_4247_02_00299_6
crossref_primary_10_1088_1367_2630_15_5_053029
crossref_primary_10_1109_TED_2018_2867547
crossref_primary_10_1007_s11071_020_06090_8
crossref_primary_10_1016_j_nonrwa_2008_02_002
crossref_primary_10_1007_s00542_016_2813_7
crossref_primary_10_1088_1361_6439_ab4bad
crossref_primary_10_1109_TMTT_2005_864108
crossref_primary_10_1016_j_mee_2006_01_219
crossref_primary_10_1063_1_1573344
crossref_primary_10_1038_ncomms2103
crossref_primary_10_1186_s40580_017_0111_4
crossref_primary_10_1115_1_1597211
crossref_primary_10_1109_JSEN_2011_2176928
crossref_primary_10_1088_0960_1317_20_12_125011
crossref_primary_10_1177_1077546307086443
crossref_primary_10_1016_j_sna_2020_111863
crossref_primary_10_1155_WCN_2006_12945
Cites_doi 10.1109/84.809070
10.1109/JRPROC.1958.286938
10.1109/TMTT.1965.1125964
10.1109/TMTT.1961.1125259
10.1109/TMTT.1966.1126339
10.1007/BF01367758
10.1109/3.535361
10.1109/2944.686727
10.1109/TMTT.1961.1125261
10.1109/JRPROC.1956.275145
ContentType Journal Article
Copyright 2001 INIST-CNRS
Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000
Copyright_xml – notice: 2001 INIST-CNRS
– notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000
DBID RIA
RIE
IQODW
AAYXX
CITATION
7SP
7TB
7U5
8FD
FR3
L7M
H8D
8BQ
JG9
7TC
F28
DOI 10.1109/84.896775
DatabaseName IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
Pascal-Francis
CrossRef
Electronics & Communications Abstracts
Mechanical & Transportation Engineering Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Engineering Research Database
Advanced Technologies Database with Aerospace
Aerospace Database
METADEX
Materials Research Database
Mechanical Engineering Abstracts
ANTE: Abstracts in New Technology & Engineering
DatabaseTitle CrossRef
Solid State and Superconductivity Abstracts
Engineering Research Database
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
Aerospace Database
Materials Research Database
METADEX
Mechanical Engineering Abstracts
ANTE: Abstracts in New Technology & Engineering
DatabaseTitleList Solid State and Superconductivity Abstracts
Materials Research Database
Solid State and Superconductivity Abstracts
Technology Research Database
Mechanical Engineering Abstracts

Technology Research Database
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library (IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
Applied Sciences
EISSN 1941-0158
EndPage 537
ExternalDocumentID 2579214081
10_1109_84_896775
856920
896775
Genre orig-research
GroupedDBID -~X
.DC
0R~
29L
4.4
5GY
5VS
6IK
97E
9M8
AAIKC
AAJGR
AAMNW
AASAJ
ABQJQ
ABVLG
ACBEA
ACGFS
ACIWK
AENEX
AETIX
AI.
AIBXA
AKJIK
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
H~9
ICLAB
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
O9-
OCL
P2P
RIA
RIE
RIG
RNS
RXW
TAE
TN5
TWZ
VH1
XFK
XWC
ABPTK
IQODW
AAYXX
CITATION
7SP
7TB
7U5
8FD
FR3
L7M
H8D
8BQ
JG9
7TC
F28
ID FETCH-LOGICAL-c458t-1ed5caf5770831d84013bf121e10b12faa1da5645a5abd9beb9b3088c6c4c1ce3
IEDL.DBID RIE
ISSN 1057-7157
IngestDate Fri Oct 25 08:00:41 EDT 2024
Fri Oct 25 09:55:51 EDT 2024
Fri Oct 25 07:32:13 EDT 2024
Fri Oct 25 08:30:42 EDT 2024
Fri Oct 25 07:04:26 EDT 2024
Thu Oct 10 18:41:43 EDT 2024
Fri Aug 23 01:12:35 EDT 2024
Sun Oct 29 17:08:11 EDT 2023
Wed Jun 26 19:31:37 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 4
Keywords Parametric amplifier
Input signal
Precision engineering
Silicon nitride
Output signal
1/f noise
High temperature
Output impedance
Micromachine
Micromechanical devices
Time varying system
Capacitance
Converter
Diaphragm
Miniaturization
Measurement method
Series resistance
Capacitor
Parametric amplification
Electromechanical system
Language English
License CC BY 4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c458t-1ed5caf5770831d84013bf121e10b12faa1da5645a5abd9beb9b3088c6c4c1ce3
Notes ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 919994760
PQPubID 23500
PageCount 10
ParticipantIDs proquest_miscellaneous_27615397
pascalfrancis_primary_856920
ieee_primary_896775
proquest_miscellaneous_746091232
crossref_primary_10_1109_84_896775
proquest_journals_919994760
proquest_miscellaneous_914651914
proquest_miscellaneous_28806675
proquest_miscellaneous_28463315
PublicationCentury 2000
PublicationDate 2000-12-01
PublicationDateYYYYMMDD 2000-12-01
PublicationDate_xml – month: 12
  year: 2000
  text: 2000-12-01
  day: 01
PublicationDecade 2000
PublicationPlace New York, NY
PublicationPlace_xml – name: New York, NY
– name: New York
PublicationTitle Journal of microelectromechanical systems
PublicationTitleAbbrev JMEMS
PublicationYear 2000
Publisher IEEE
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: Institute of Electrical and Electronics Engineers
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References ref8
ref7
ref9
ref4
ref3
ref6
ref10
ref5
blackwell (ref11) 1961
ref2
ref1
References_xml – year: 1961
  ident: ref11
  publication-title: Semiconductor-Diode Parametric Amplifiers
  contributor:
    fullname: blackwell
– ident: ref4
  doi: 10.1109/84.809070
– ident: ref10
  doi: 10.1109/JRPROC.1958.286938
– ident: ref5
  doi: 10.1109/TMTT.1965.1125964
– ident: ref1
  doi: 10.1109/TMTT.1961.1125259
– ident: ref3
  doi: 10.1109/TMTT.1966.1126339
– ident: ref2
  doi: 10.1007/BF01367758
– ident: ref7
  doi: 10.1109/3.535361
– ident: ref8
  doi: 10.1109/2944.686727
– ident: ref6
  doi: 10.1109/TMTT.1961.1125261
– ident: ref9
  doi: 10.1109/JRPROC.1956.275145
SSID ssj0014486
Score 1.9161066
Snippet This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The...
The application areas are in amplifiers which operate at very high temperatures (200°C-600°C), under high particle bombardment (nuclear applications), in...
SourceID proquest
crossref
pascalfrancis
ieee
SourceType Aggregation Database
Index Database
Publisher
StartPage 528
SubjectTerms Amplification
Amplifiers
Applied sciences
Bandpass filters
Capacitance
Capacitance measurement
Capacitors
Current voltage characteristics
Devices
Diaphragms
Electric impedance measurement
Electrical resistance measurement
Exact sciences and technology
Gain measurement
High temperature operations
Impedance
Low-noise amplifiers
Mechanical engineering. Machine design
Mechanical variables measurement
Metallization
Microelectromechanical systems
Micromechanical devices
Parametric amplifiers
Precision engineering, watch making
Silicon nitride
Temperature
Voltage
Title A novel parametric-effect MEMS amplifier
URI https://ieeexplore.ieee.org/document/896775
https://www.proquest.com/docview/919994760
https://search.proquest.com/docview/27615397
https://search.proquest.com/docview/28463315
https://search.proquest.com/docview/28806675
https://search.proquest.com/docview/746091232
https://search.proquest.com/docview/914651914
Volume 9
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELZoJSQYeBQQpQUixMCSNk7s2B4RaoWQygKV2CLbsRcgRaRl4Nfjc9JCeVQsURRfhpwf9zn-7juEzrk2QjnYGmKTk5Dw2IY8yWWYQyzQ3ApiIHd4dJtej8nNA32odbZ9LowxxpPPTA9u_Vl-PtEz-FXW5yJljDZQgwlRpWotDgzcLsMnEjn4ETJMWS0ihCPR56RXvbgUenwtFWBCytI5w1ZVLH4syD7KDLer9O3SixMCueSxN5uqnn7_Jt34zw_YQVs12gwuq-Gxi9ZM0UKbXzQIW2jdc0B1uYcuLoNi8maeApADf4ZKWzqs6B7BaDC6CySQz60Lo_toPBzcX12HdSGFUBPKp9APVEtLGYO6YjmHPZWyOMYGRwrHVkqcS5CVkVSqXCijhErc8qNTTTTWJjlAzWJSmEMU5DYBYqhV2EZEa6MYIK5IM27dVkvyNjqb-zh7qfQyMr_PiETGSVY5oI1a4JuFwfxpd6kzPptpKuKojTrzvsnqeVZmAlQUCEtd6-mi1U0QOPWQhZnMyixmgGkFW2HhMFiSYLrKggMZ2FkEf1gwkjrk5eDp3yYCQ915dz369fM7aMOn-XuqTBc1p68zc-wAz1Sd-KH-AaJw_qU
link.rule.ids 315,783,787,799,27938,27939,55088
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Bb9MwFH4anRBw2FgBrWxj0cSBS9o4sWP7WE2turHusk3qLbId-wKkiLQ77NfPz0kLZaziEkXxy8HPdt7n-HvfA_gsjJXaw9aY2JLGVKQuFlmp4hJjgRFOUou5w9PrfHJHL2ds1upsh1wYa20gn9k-3oaz_HJulvirbCBkzjl7AbsMYUWTrLU-MvD7jJBK5AFIzAnjrYwQSeRA0H7z6kbwCdVUkAupau8O19SxePJJDnFmvN8kcNdBnhDpJd_6y4Xum4e_xBv_swtvYa_Fm9GwmSAHsGOrLrz5Q4WwCy8DC9TU7-DLMKrm9_Z7hILgP7DWlokbwkc0HU1vIoX0c-cD6Xu4G49uzydxW0ohNpSJBY4EM8oxzrGyWClwV6UdSYkliSapU4qUCoVlFFO6lNpqqTPvY5Mbaoix2QfoVPPKHkJUugypoU4Tl1BjrOaIuRLDhfObLSV6cLbycfGzUcwowk4jkYWgReOAHnTRN2uD1dPjjcH43cxymSY9OFqNTdGutLqQqKNAee5bT9etfonguYeq7HxZFylHVCv5FguPwrKMsG0WAunA3iJ6xoLT3GMvD1CfN5EEK8_768d_dv8UXk1up1fF1cX11yN4HZL-A3HmGDqLX0t74uHPQn8K0_4RFhwCAQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+novel+parametric-effect+MEMS+amplifier&rft.jtitle=Journal+of+microelectromechanical+systems&rft.au=Raskin%2C+J.-P&rft.au=Brown%2C+A.R&rft.au=Khuri-Yakub%2C+B&rft.au=Rebeiz%2C+G.M&rft.date=2000-12-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=1057-7157&rft.eissn=1941-0158&rft.volume=9&rft.issue=4&rft.spage=528&rft_id=info:doi/10.1109%2F84.896775&rft.externalDBID=NO_FULL_TEXT&rft.externalDocID=2579214081
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1057-7157&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1057-7157&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1057-7157&client=summon