Model for carrier capture time through phonon emission in InGaN/GaN quantum wells

• Published in: Physica Status Solidi. B: Basic Solid State Physics Vol. 252; no. 5; pp. 971 - 976
• Main Authors: Vallone, Marco, Bertazzi, Francesco, Goano, Michele, Ghione, Giovanni
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.05.2015
• Subjects: Carrier density; Carriers; charge carrier capture; Emission; GaN; Indium gallium nitrides; InGaN; light emitting diodes; Mathematical analysis; Mathematical models; phonon-assisted processes; Phonons; Quantum wells
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.201451580

A self‐energy‐based model for the calculation of the electron capture time through phonon emission in presence of carrier population is applied to nitride‐based quantum wells (QWs). The role of plasma dynamical screening on the Frölich interaction is investigated, highlighting its central role in the dependence of capture time on carrier density. The proposed approach yields a closed‐form expression for capture time as a function of the carrier densities in QW and barrier states. Its application to simple two‐population rate equations allows to reproduce available experimental data with excellent agreement, offering an accurate yet practical alternative to the usual approximation of a constant capture time in modeling light‐emitting diodes and lasers.