Controlling the Polarity of Silicon Nanowire Transistors

Each generation of integrated circuit (IC) technology has led to new applications. The most recent advances have enabled noninvasive surgery, three-dimensional (3D) games and movies, and intelligent cars, to name a few. A single chip can contain more than 1 billon elementary devices, and this gain i...

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Bibliographic Details
Published inScience (American Association for the Advancement of Science) Vol. 340; no. 6139; pp. 1414 - 1415
Main Author Ernst, Thomas
Format Journal Article
LanguageEnglish
Published Washington American Association for the Advancement of Science 21.06.2013
The American Association for the Advancement of Science
American Association for the Advancement of Science (AAAS)
Subjects
Charge carriers
Conduction
Devices
Drains
Electrons
Integrated circuits
Logic gates
Nanostructure
Nanotechnology
Nanowires
Panels
PERSPECTIVES
Semiconductor devices
Semiconductors
Silicon
Three dimensional
Transistors
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Summary:Each generation of integrated circuit (IC) technology has led to new applications. The most recent advances have enabled noninvasive surgery, three-dimensional (3D) games and movies, and intelligent cars, to name a few. A single chip can contain more than 1 billon elementary devices, and this gain in complexity has been achieved by fabricating nanometer-scale transistors used as switches or memories. Recent experimental work by De Marchi et al. (1) describes changes to the structure of one of the most basic bricks of ICs by controlling the type of conduction occurring in vertically stacked silicon (Si) nanowire transistors (see the figure, panels A and B), thus making a programmable transistor.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1238630