A Megapixel Matrix Photodetector of the Middle Infrared Range

• Published in: Journal of communications technology & electronics Vol. 64; no. 9; pp. 1011 - 1015
• Main Authors: Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Stroganov, A. S., Tsarenko, A. V., Yakushev, M. V., Latyshev, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.09.2019; Springer; Springer Nature B.V
• Subjects: Activation energy; Communications Engineering; Communications equipment; Engineering; Focal plane; Forbidden bands; Histograms; Mathematical analysis; Matrix methods; Networks; Temperature; Temperature dependence; IR matrix; HgCdTe; multiplexer; heterostructure; FPA; detectability
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226919090043

—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n + –p- HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 10 12 cm Hz 1/2 /W.