Plasma oscillations of the two-dimensional electron gas in the field-effect transistor with a cylindrical gate electrode

• Published in: Journal of communications technology & electronics Vol. 55; no. 11; pp. 1285 - 1294
• Main Authors: Arsenin, A. V., Gladun, A. D., Leiman, V. G., Semenenko, V. L., Ryzhii, V. I.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.11.2010; Springer; Springer Nature B.V
• Subjects: Analysis; Communications Engineering; Communications technology; Electric fields; Electrodes; Electromagnetism; Electron gas; Electronics; Electrons; Engineering; Field-effect transistors; Frequencies; Gas fields; Gates; Nanoelectronics; Nanostructure; Networks; Nuclear radiation; Plasma; Radiation; Semiconductor devices; Studies; Transistors; Two dimensional; Plasma Oscillation; Field Effect Transistor; ARSENIN; Gate Electrode; Linear Charge Density
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226910110112

The frequency characteristics of the two-dimensional electron gas in the field-effect transistor with with a cylindrical gate electrode are obtained in the framework of the linear hydrodynamic model. The effect of the transverse dimension and the position of the gate electrode and the parameters of thetwo-dimensional electron gas layer on the resonance characteristics of the field-effect transistor is analyzed. The practical prospects of the results in the development of nanosized oscillators and detectors of the terahertz electromagnetic radiation are outlined.