Microscopic Evidence for Spatially Inhomogeneous Charge Trapping in Pentacene
Charge traps in pentacene thin‐film transistors (Figure, left) have been imaged using electric force microscopy. The Figure shows a map of the trap distribution just below (middle) and well above (right) the transistor threshold voltage. It is found that the long‐lived charge traps in polycrystallin...
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Published in | Advanced materials (Weinheim) Vol. 17; no. 11; pp. 1410 - 1414 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
06.06.2005
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | Charge traps in pentacene thin‐film transistors (Figure, left) have been imaged using electric force microscopy. The Figure shows a map of the trap distribution just below (middle) and well above (right) the transistor threshold voltage. It is found that the long‐lived charge traps in polycrystalline pentacene are distributed inhomogeneously and do not appear to be associated with grain boundaries, as is generally assumed (see cover). |
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Bibliography: | ark:/67375/WNG-TBJBHPX0-J The authors thank Dr. Ricardo Ruiz and Prof. George Malliaras of Cornell University for assistance with pentacene deposition and for many useful discussions. This work was supported by Cornell University, the National Science Foundation (via CAREER award DMR-0134956, the Cornell Nanoscale Science and Technology Facility, and the Cornell Center for Nanoscale Systems, and the Cornell Center for Materials Research). istex:8A919EBB3AA65F76ABE6BD7AB9995F5EB19F9FD4 ArticleID:ADMA200401174 The authors thank Dr. Ricardo Ruiz and Prof. George Malliaras of Cornell University for assistance with pentacene deposition and for many useful discussions. This work was supported by Cornell University, the National Science Foundation (via CAREER award DMR‐0134956, the Cornell Nanoscale Science and Technology Facility, and the Cornell Center for Nanoscale Systems, and the Cornell Center for Materials Research). ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200401174 |