Fabrication of an array of single-electron transistors for a scanning probe microscope sensor
A technique for the fabrication of single-electron transistors (SETs) on tips for use in scanning probe microscopy is presented. The tips are micromachined out of an MBE-grown AlGaAs-GaAs heterostructure with a trench within each tip. The SETs are produced by aluminum evaporation and oxidation, and...
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Published in | Nanotechnology Vol. 19; no. 37; p. 375301 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
England
IOP Publishing
17.09.2008
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Online Access | Get full text |
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Summary: | A technique for the fabrication of single-electron transistors (SETs) on tips for use in scanning probe microscopy is presented. The tips are micromachined out of an MBE-grown AlGaAs-GaAs heterostructure with a trench within each tip. The SETs are produced by aluminum evaporation and oxidation, and natural shadowing by the trench is used to separate the source and drain electrodes. By separating adjacent tips also by trenches, the concept allows the fabrication of tip arrays for parallel probing. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/0957-4484/19/37/375301 |