Transport anomalies in the layered compound BaPt4Se6
We report a layered ternary selenide BaPt 4 Se 6 featuring sesqui-selenide Pt 2 Se 3 layers sandwiched by Ba atoms. The Pt 2 Se 3 layers in this compound can be derived from the Dirac-semimetal PtSe 2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt...
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Published in | npj quantum materials Vol. 6; no. 1; pp. 1 - 7 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
23.09.2021
Nature Publishing Group Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | We report a layered ternary selenide BaPt
4
Se
6
featuring sesqui-selenide Pt
2
Se
3
layers sandwiched by Ba atoms. The Pt
2
Se
3
layers in this compound can be derived from the Dirac-semimetal PtSe
2
phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe
6
octahedra and PtSe
4
square net coordination configurations. Temperature-dependent electrical transport measurements suggest two distinct anomalies: a resistivity crossover, mimic to the metal-insulator (M-I) transition at ~150 K, and a resistivity plateau at temperatures below 10 K. The resistivity crossover is not associated with any structural, magnetic, or charge order modulated phase transitions. Magnetoresistivity, Hall, and heat capacity measurements concurrently suggest an existing hidden state below 5 K in this system. Angle-resolved photoemission spectroscopy measurements reveal a metallic state and no dramatic reconstruction of the electronic structure up to 200 K. |
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Bibliography: | USDOE Office of Science (SC) Gordon and Betty Moore Foundation (GBMF) Seed Program for Interdisciplinary Research (SPIRe) National Science Foundation (NSF) Robert A. Welch Foundation Alfred P. Sloan Foundation AC02-05CH11231; GBMF9470; FA9550-19-1-0037; C-2024 US Air Force Office of Scientific Research (AFOSR) |
ISSN: | 2397-4648 2397-4648 |
DOI: | 10.1038/s41535-021-00382-x |