Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching

We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 µm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm...

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Bibliographic Details
Published inNanotechnology Vol. 19; no. 34; p. 345301
Main Authors Morton, Keith J, Nieberg, Gregory, Bai, Shufeng, Chou, Stephen Y
Format Journal Article
LanguageEnglish
Published England IOP Publishing 27.08.2008
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Summary:We demonstrate wide-area fabrication of sub-40 nm diameter, 1.5 µm tall, high aspect ratio silicon pillar arrays with straight sidewalls by combining nanoimprint lithography (NIL) and deep reactive ion etching (DRIE). Imprint molds were used to pre-pattern nanopillar positions precisely on a 200 nm square lattice with long range order. The conventional DRIE etching process was modified and optimized with reduced cycle times and gas flows to achieve vertical sidewalls; with such techniques the pillar sidewall roughness can be reduced below 8 nm (peak-to-peak). In some cases, sub-50 nm diameter pillars, 3 µm tall, were fabricated to achieve aspect ratios greater than 60:1.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/34/345301