High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers
A record high OFET hole mobility, as high as 23.7 cm2/Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport.
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Published in | Advanced materials (Weinheim) Vol. 26; no. 19; pp. 2993 - 2998 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Germany
Blackwell Publishing Ltd
21.05.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A record high OFET hole mobility, as high as 23.7 cm2/Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport. |
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Bibliography: | Mitsubishi Chemical Corporation (Japan) istex:C2FC1C057CC1A6B2E8C94C4BD441DDE62EBDD505 ArticleID:ADMA201305084 ark:/67375/WNG-5D97FLXR-F ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201305084 |