A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions
Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compe...
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| Published in | Nature communications Vol. 15; no. 1; pp. 918 - 9 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
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London
Nature Publishing Group UK
31.01.2024
Nature Publishing Group Nature Portfolio |
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| Abstract | Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.
The authors showcase a five-channel silicon microring modulator array with a total data rate in the terabit range. Each microring is equipped with two separate Z-shape junctions to overcome the bandwidth and modulation efficiency trade-off, providing a pathway for future 200 Gb/s/lane silicon optical interconnects. |
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| AbstractList | Abstract Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects. Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects. Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.The authors showcase a five-channel silicon microring modulator array with a total data rate in the terabit range. Each microring is equipped with two separate Z-shape junctions to overcome the bandwidth and modulation efficiency trade-off, providing a pathway for future 200 Gb/s/lane silicon optical interconnects. Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects. The authors showcase a five-channel silicon microring modulator array with a total data rate in the terabit range. Each microring is equipped with two separate Z-shape junctions to overcome the bandwidth and modulation efficiency trade-off, providing a pathway for future 200 Gb/s/lane silicon optical interconnects. Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects. |
| ArticleNumber | 918 |
| Author | Beausoleil, Raymond G. Cheung, Stanley Yuan, Yuan Huang, Zhihong Fiorentino, Marco Liang, Di Peng, Yiwei Sorin, Wayne V. |
| Author_xml | – sequence: 1 givenname: Yuan orcidid: 0000-0003-0907-9934 surname: Yuan fullname: Yuan, Yuan email: yuan.yuan@hpe.com organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 2 givenname: Yiwei orcidid: 0000-0002-5014-8527 surname: Peng fullname: Peng, Yiwei organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 3 givenname: Wayne V. orcidid: 0000-0003-4677-0134 surname: Sorin fullname: Sorin, Wayne V. organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 4 givenname: Stanley orcidid: 0000-0002-4886-0013 surname: Cheung fullname: Cheung, Stanley organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 5 givenname: Zhihong surname: Huang fullname: Huang, Zhihong organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 6 givenname: Di surname: Liang fullname: Liang, Di organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 7 givenname: Marco orcidid: 0000-0001-8867-3098 surname: Fiorentino fullname: Fiorentino, Marco organization: Hewlett Packard Labs, Hewlett Packard Enterprise – sequence: 8 givenname: Raymond G. surname: Beausoleil fullname: Beausoleil, Raymond G. organization: Hewlett Packard Labs, Hewlett Packard Enterprise |
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| Title | A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions |
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