A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

• Published in: Nature communications Vol. 15; no. 1; pp. 918 - 9
• Main Authors: Yuan, Yuan, Peng, Yiwei, Sorin, Wayne V., Cheung, Stanley, Huang, Zhihong, Liang, Di, Fiorentino, Marco, Beausoleil, Raymond G.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 31.01.2024; Nature Publishing Group; Nature Portfolio
• Subjects: 639/624/1075/401; 639/624/399/1097; 639/624/399/1099; Arrays; Artificial intelligence; Bandwidths; Data transmission; Dense Wavelength Division Multiplexing; Energy consumption; Humanities and Social Sciences; Light modulation; Modulators; multidisciplinary; Optical interconnects; P-n junctions; Science; Science (multidisciplinary); Silicon; Tradeoffs; Wavelength
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-024-45301-3

Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects. The authors showcase a five-channel silicon microring modulator array with a total data rate in the terabit range. Each microring is equipped with two separate Z-shape junctions to overcome the bandwidth and modulation efficiency trade-off, providing a pathway for future 200 Gb/s/lane silicon optical interconnects.