Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes

• Published in: Nanomaterials (Basel, Switzerland) Vol. 12; no. 17; p. 3038
• Main Author: Jang, A-Rang
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.09.2022; MDPI
• Subjects: Chemical vapor deposition; Contact potentials; Electric contacts; Electric fields; Electrical properties; Electrodes; Electron mobility; Field effect transistors; Graphene; Interfaces; Molybdenum disulfide; Schottky barrier; Semiconductor devices; Silicon wafers; Spectrum analysis; Transistors; United States > US; Germany
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano12173038

Two–dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS2 field-effect transistors (FETs) with Au/Ti–graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS2 FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS2 FETs, specifically between the MoS2 FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS2 FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS2–graphene interface could be modulated. The MoS2 FETs with Au/Ti–graphene electrodes exhibited enhanced on/off ratios (~102 times) and electron mobility (~2.5 times) compared to the MoS2 FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS2 FETs and provide a facile route for viable electronic applications.