Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

• Published in: Journal of semiconductors Vol. 30; no. 2; pp. 17 - 20
• Main Author: 刘汉法 张化福 类成新 袁长坤
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.2009
• Subjects: 半导体技术; 溅射电压; 磁控溅射; 透明导电膜
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/2/023001

Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.