Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
Inductively coupled plasma-reactive ion etching (ICP-RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 1019 cm−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence...
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Published in | Japanese Journal of Applied Physics Vol. 60; no. SB; p. SBBD03 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
IOP Publishing
01.05.2021
Japanese Journal of Applied Physics |
Subjects | |
Online Access | Get full text |
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Summary: | Inductively coupled plasma-reactive ion etching (ICP-RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 1019 cm−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2-2.3 eV, whose origin was considered to be isolated nitrogen vacancies (VN), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP-RIE bias power (Pbias). Low-bias-power (low-Pbias) ICP-RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current-voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with Pbias of 2.5 W. |
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Bibliography: | JJAP-S1102004.R1 |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.35848/1347-4065/abd538 |