Preparation and characterization of crystalline MnS thin films by chemical bath deposition

• Published in: Thin solid films Vol. 492; no. 1; pp. 1 - 5
• Main Authors: Gümüş, C., Ulutaş, C., Esen, R., Özkendir, O.M., Ufuktepe, Y.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.12.2005; Elsevier Science
• Subjects: Chalcogenides; Chemical bath deposition; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Manganese sulfide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties; Physics; 78.66.Li; 78.55.Et; Chalcogenides; Chemical bath deposition; 81.05.Dz; Manganese sulfide; Optical properties; 68.55.-a; 81.15.Gh; 81.10.Dn; Stoichiometry; Inorganic compounds; Basic solution; XRD; EXAFS; Thin films; Energy dispersive X-ray analysis; Aqueous solutions; Manganese sulfides; 81.15.Gh Chemical bath deposition; Absorption spectra; Nanocrystal; Scanning electron microscopy; Transition element compounds; Crystallization; Binary compounds; Experimental study; Preferred orientation; Hexagonal lattices; Morphology; Wurtzite structure; Nanostructured materials
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.06.016

Crystalline γ-MnS thin films were deposited by chemical bath deposition method at 27 °C. The MnS thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis (EDAX) and optical absorption spectroscopy. XRD measurements show that the films are crystallized in the wurtzite phase and present a preferential orientation along the c-axis. Only one peak, corresponding to the (002) phase (2 θ = 28.26°), appears on the diffractograms. The X-ray absorption fine structure spectroscopy calculation of Mn K-edge in MnS is in agreement with the measured result. The deposited MnS thin films on glass substrates consist of nanocrystalline grains. EDAX analysis shows that average ratio of atomic percentage of Mn : S is 1 : 0.82 so one can conclude that the films are in good stoichiometric ratio. The optical band gap of thin film was estimated to be 3.88 eV.