Cover

Loading…
More Information
Summary:Techniques for active modulation and control of plasmonic signals in future highly‐integrated nanophotonic devices have advanced rapidly in recent years, with recent innovations extending performance into the terahertz frequency and femtojoule‐per‐bit switching energy domains. As thoughts turn towards the development of practical device structures, key technologies are compared in this review and prospects are assessed for the future development of the field. Techniques for active modulation and control of plasmonic signals in future highly‐integrated nanophotonic devices have advanced rapidly in recent years, with recent innovations extending performance into the terahertz frequency and femtojoule‐per‐bit switching energy domains. As thoughts turn towards the development of practical device structures, key technologies are compared in this review and prospects are assessed for the future development of the field.
Bibliography:ark:/67375/WNG-VF8S3NFR-L
UK's Engineering and Physical Sciences Research Council - No. EP/C511786/1
istex:65C24DC00C4EDCACF6405C489DCCE868045F4A9D
ArticleID:LPOR200900035
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1863-8880
1863-8899
DOI:10.1002/lpor.200900035