InGaN-based red light-emitting diodes: from traditional to micro-LEDs

InGaN-based LEDs are efficient light sources in the blue–green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. SA; p. SA0809
Main Authors Zhuang, Zhe, Iida, Daisuke, Ohkawa, Kazuhiro
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.01.2022
Japanese Journal of Applied Physics
Subjects
chip size
Color
Commercialization
electroluminescence
Indium gallium nitrides
InGaN
Light emitting diodes
Light sources
Micrometers
red light-emitting diodes
red micro-light-emitting diodes
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ISSN0021-4922
1347-4065
DOI10.35848/1347-4065/ac1a00

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Summary:InGaN-based LEDs are efficient light sources in the blue–green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates).
Bibliography:JJAP-S1102296.R1
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ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac1a00