Vertical Second Harmonic Generation in Asymmetric Dielectric Nanoantennas

High-permittivity III-V semiconductor nanocavities have shown huge potential for enhanced nonlinear light-matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient; however, vertical emission is difficult to achieve, due to...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics journal Vol. 12; no. 3; pp. 1 - 7
Main Authors Rocco, Davide, Gigli, Carlo, Carletti, Luca, Marino, Giuseppe, Vincenti, Maria Antonietta, Leo, Giuseppe, De Angelis, Costantino
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.06.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:High-permittivity III-V semiconductor nanocavities have shown huge potential for enhanced nonlinear light-matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient; however, vertical emission is difficult to achieve, due to the zincblende χ (2) tensor and epitaxially growth on (100) substrates. Here, we demonstrate that we can shape the second harmonic radiation pattern from a single AlGaAs nanostructure by exploiting a geometrical symmetry breaking optimization approach. The optimized design allows to redirect the SH signal toward the normal direction and to increase the SH power collection efficiency by 2 orders of magnitude in a small numerical aperture of 0.1 with respect to the symmetrical counterpart structure.
ISSN:1943-0655
1943-0655
1943-0647
DOI:10.1109/JPHOT.2020.2988502