Vertical Second Harmonic Generation in Asymmetric Dielectric Nanoantennas
High-permittivity III-V semiconductor nanocavities have shown huge potential for enhanced nonlinear light-matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient; however, vertical emission is difficult to achieve, due to...
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Published in | IEEE photonics journal Vol. 12; no. 3; pp. 1 - 7 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.06.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | High-permittivity III-V semiconductor nanocavities have shown huge potential for enhanced nonlinear light-matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient; however, vertical emission is difficult to achieve, due to the zincblende χ (2) tensor and epitaxially growth on (100) substrates. Here, we demonstrate that we can shape the second harmonic radiation pattern from a single AlGaAs nanostructure by exploiting a geometrical symmetry breaking optimization approach. The optimized design allows to redirect the SH signal toward the normal direction and to increase the SH power collection efficiency by 2 orders of magnitude in a small numerical aperture of 0.1 with respect to the symmetrical counterpart structure. |
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ISSN: | 1943-0655 1943-0655 1943-0647 |
DOI: | 10.1109/JPHOT.2020.2988502 |