Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers

• Published in: IEEE journal of quantum electronics Vol. 38; no. 6; pp. 640 - 651
• Main Authors: Tansu, N., Ying-Lan Chang, Takeuchi, T., Bour, D.P., Corzine, S.W., Tan, M.R.T., Mawst, L.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2002; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Current density; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Holes; Indium gallium arsenide; Indium gallium arsenides; Laser theory; Lasers; Optical materials; Optics; Performance analysis; Physics; Quantum efficiency; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor lasers; laser diodes; Temperature dependence; Threshold current; Threshold currents; Time of arrival estimation; Temperature dependence; Gallium arsenides; Ternary compounds; Photoluminescence; Theoretical study; Binary compounds; Threshold current; Laser diodes; MOCVD; Indium arsenides; Gallium phosphides; Semiconductor lasers; Infrared laser; Indium phosphides; Strained quantum well; Quantum well lasers; Carrier density; Analytical solution
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2002.1005415

Characteristic temperature coefficients of the threshold current (T/sub 0/) and the external differential quantum efficiency (T/sub 1/) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristic temperature coefficients of the threshold current (T/sub 0/) and the external differential quantum efficiency (T/sub 1/) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (J/sub th/) and transparency (J/sub tr/) current density, the carrier injection efficiency (/spl eta//sub inj/) and external (/spl eta//sub d/) differential quantum efficiency, the internal loss (/spl alpha//sub i/), and the material gain parameter (g/sub o/). The temperature analysis is performed on low-threshold current density (/spl lambda/ = 1.17-1.19 /spl mu/m) InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for T/sub 0/ and T/sub 1/ are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.