Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures

• Published in: RSC advances Vol. 9; no. 24; pp. 13418 - 13423
• Main Authors: Deng, Zhongxun, Wang, Xianhui, Cui, Jie
• Format: Journal Article
• Language: English
• Published: England Royal Society of Chemistry 01.05.2019; The Royal Society of Chemistry
• Subjects: Chemistry; Contact resistance; Defects; First principles; Gallium nitrides; Graphene; Heterostructures; Interlayers; Nanoelectronics; Nanotechnology devices
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/c9ra01576k

To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V Ga heterostructure maintains a p-type Schottky contact in the spin-up channel and the Schottky barrier height (SBH) is decreased to 0.332 eV, but there is not a metal/semiconductor contact in the spin-down channel. However, the n-type SBH is negative for the graphene/g-GaN-V N heterostructure, indicating an ohmic contact. Furthermore, the SBH in the graphene/g-GaN heterostructure can be effectively modulated by the interlayer distance. The research could provide a strategy for the development and fabrication of efficient novel nanoelectronic devices. To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations.