PMN-PT and PIN-PMN-PT single crystals grown by continuous-feeding Bridgman method

•A 320 mm long PMN-PT single crystal boule was grown by continuous-feeding Bridgman method.•The method realizes high uniformity for composition and properties within a boule.•A 0.31PIN-0.43PMN-0.26PT crystal showed a high coercive field (550 V/mm) and high phase transition temperature (134 °C). Pb(M...

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Bibliographic Details
Published inJournal of crystal growth Vol. 531; p. 125364
Main Authors Echizenya, Kazuhiko, Nakamura, Keiichiro, Mizuno, Keisuke
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.2020
Elsevier BV
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Summary:•A 320 mm long PMN-PT single crystal boule was grown by continuous-feeding Bridgman method.•The method realizes high uniformity for composition and properties within a boule.•A 0.31PIN-0.43PMN-0.26PT crystal showed a high coercive field (550 V/mm) and high phase transition temperature (134 °C). Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals are superior piezoelectric materials. The single crystal boules grown by the Bridgman method include large property variation due to compositional segregation. We have developed the continuous-feeding Bridgman method to eliminate the compositional segregation. A long size PMN-PT single crystal boule (80 mm in diameter and 320 mm in length) was successfully grown under optimized growth conditions. The boule showed high property uniformity (10% in d33 variation) as a result of high composition uniformity. This results in productivity enhancement of 24% compared to our conventional 220 mm long boules. Two PIN-PMN-PT single crystal boules each with different target composition were also successfully grown. They showed stable properties and also higher coercive field (Ec = 510–550 V/mm) than PMN-PT. One of the crystals exhibited a very high phase transition temperature (Trt = 134 °C). The PIN-PMN-PT single crystals produced during this study will be beneficial for high power or high temperature applications.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2019.125364