Fabrication and optical characterization of GaN micro-disk cavities undercut by laser-assisted photo-electrochemical etching

Abstract GaN micro-disk cavities undercut by laser-assisted photo-electrochemical (PEC) etching are fabricated and optically characterized. The laser source used in the PEC etching is tuned to be absorbed by the InGaN/GaN superlattice beneath the GaN disk to selectively etch the superlattice. Whispe...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 62; no. SC; p. SC1069
Main Authors Tajiri, T., Sosumi, S., Shimoyoshi, K., Uchida, K.
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.04.2023
Japanese Journal of Applied Physics
Subjects
Electrochemical etching
Emission analysis
gallium nitride
Indium gallium nitrides
Lasers
Light emission
micro-disk cavity
Optical properties
photo-electrochemical etching
Photoluminescence
Quantum wells
Superlattices
Whispering gallery modes
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Summary:Abstract GaN micro-disk cavities undercut by laser-assisted photo-electrochemical (PEC) etching are fabricated and optically characterized. The laser source used in the PEC etching is tuned to be absorbed by the InGaN/GaN superlattice beneath the GaN disk to selectively etch the superlattice. Whispering gallery modes (WGMs) in fabricated GaN micro-disk cavities are evaluated by micro-photoluminescence spectroscopy of light emission from the embedded InGaN quantum wells. Quality factors estimated for the WGMs reach approximately 6700 at blue-violet wavelengths. Detailed analysis suggests that the high- Q WGMs are the fundamental WGMs. These results indicate the high applicability of laser-assisted PEC etching to the fabrication of air-clad GaN micro-cavities.
Bibliography:JJAP-S1103071.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acb65a