Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm

• Published in: Physica status solidi. A, Applications and materials science Vol. 205; no. 1; pp. 96 - 100
• Main Authors: Arif, Ronald A., Ee, Yik-Khoon, Tansu, Nelson
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.01.2008; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 81.15.−z; 85.30.−z; 85.35.Be; 85.60.Bt; 85.60.Jb; 85.60.−q; Applied sciences; Electronics; Exact sciences and technology; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Quantum well; Photoluminescence; Visible radiation; Radiative recombination; Nanostructure; Optical amplification; MOCVD; Light emitting diode
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200777478

We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly improved radiative recombination rate and optical gain, in comparison to the conventional InGaN QW. Experimental results of light emitting diode (LED) structure utilizing staggered InGaN QW show good agreement with theory. Staggered InGaN QW allows polarization engineering leading to improvement of photoluminescence intensity and LEDs output power as a result of enhanced radiative recombination rate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)