Ultrathin metal layers to convert surface polarity of nitride semiconductors

The possibility of the surface‐polarity conversion of AlN upon the deposition of ultrathin Al metal layers is investigated by the first‐principles theoretical calculations. It is shown that, reflecting the crystal structures of underlying layers and the binding‐energy difference between Al–N and Al–...

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Published inPhysica Status Solidi (b) Vol. 242; no. 6; pp. 1209 - 1213
Main Authors Nakayama, T., Mikami, J.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.05.2005
WILEY‐VCH Verlag
Wiley
Subjects
68.35.Bs
68.43.-h
68.55.Ac
68.65.Fg
73.20.Hb
Exact sciences and technology
Physics
Ultrathin films
Thickness
Nitrides
Lamellar structure
Semiconductor materials
Binding energy
Aluminium nitrides
Density functional method
Wurtzite structure
Surface layers
Crystal structure
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Summary:The possibility of the surface‐polarity conversion of AlN upon the deposition of ultrathin Al metal layers is investigated by the first‐principles theoretical calculations. It is shown that, reflecting the crystal structures of underlying layers and the binding‐energy difference between Al–N and Al–Al bonds, the surface‐polarity conversion from N‐face to Al‐face polarity becomes possible only when the deposited Al metal layers have wurtzite structure and two‐monolayer thickness. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:EBC09A27E4D967992DE992775404D7B72247ABFC
ArticleID:PSSB200460766
ark:/67375/WNG-Z8MXG005-S
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200460766