Two modes of HVPE growth of GaN and related macrodefects

• Published in: Physica status solidi. C Vol. 10; no. 3; pp. 468 - 471
• Main Authors: Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.03.2013; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Crack propagation; cracks; Density; Evolution; Fracture mechanics; Gallium nitrides; GaN; Heat treatment; HVPE; macrodefects; Pits; Solid state physics
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201200701

GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films grown in LT mode had rough surface with high density of V‐defects (pits), however, such films were crack‐free. The influence of growth parameters on the pit shape and evolution was investigated. Origins of pits formation and process of pit overgrowth are discussed. Crack‐free films with smooth surface and reduced density of pits were grown using combination of the LT and HT growth modes. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)