Characterization of semipolar {11$ bar 2 $2} light-emitting diodes using a hole blocking layer

• Published in: Physica status solidi. C Vol. 11; no. 3-4; pp. 775 - 777
• Main Authors: Nakao, Kota, Haziq, Muhammad, Okamura, Yasumasa, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.02.2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: 11$ \bar 2 $2; Aluminum; Electric potential; Electroluminescence; GaN; Injection current; light-emitting diode; Light-emitting diodes; MOVPE; Quantum wells; semipolar; Solid state physics; Voltage
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201300511

In this study, we fabricated {11$ \bar 2 $2} light‐emitting diodes (LEDs) using a single quantum well (SQW) and hole blocking layer (HBL) with various Al compositions and investigated the effect of the HBL on the characteristics of the LED. The electroluminescence (EL) intensity increased with an increase of the Al composition of the HBL. Furthermore, the EL intensity increased by a factor of six when the Al composition of the HBL increased by 25%. The forward voltages of the LEDs with the HBLwere approximately 3 V regardless of the Al composition of the HBL. The prevention of hole overflow using the HBL is demonstrated by the injection current dependence of the EL intensity and the blueshift by comparing the SQW LEDs with the HBLs with the SQW LEDs without the HBL and a multiple quantum well LED. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)