Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates

• Published in: Physica status solidi. A, Applications and materials science Vol. 205; no. 7; pp. 1719 - 1723
• Main Authors: Gao, Haiyong, Yan, Fawang, Zhang, Yang, Li, Jinmin, Zeng, Yiping, Wang, Guohong
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.07.2008; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 68.55.ag; 73.40.Kp; 78.60.Fi; 81.65.Cf; 85.30.Kk; Applied sciences; Electronics; Exact sciences and technology; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Injection current; Inductively coupled plasma; Nanopatterning; Output power; Voltage current curve; Dry etching; Sapphire; MOCVD; Gallium nitride; Light emitting diode
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200723540

Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaN‐based light‐emitting diodes (LEDs). GaN‐based LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). The characteristics of LEDs fabricated on NPSS prepared by dry etching were studied. The light output power and wall‐plug efficiency of the LEDs fabricated on NPSS were greater than those of the conventional LEDs fabricated on common planar sapphire substrates when the injection currents were the same. The LEDs on NPSS and common planar sapphire substrates have similar I –V characteristics. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)