Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

• Published in: Physica status solidi. A, Applications and materials science Vol. 203; no. 11; pp. 2887 - 2890
• Main Authors: Nishii, A., Uehara, T., Sakano, T., Nabetani, Y., Akitsu, T., Kato, T., Matsumoto, T., Hagihara, S., Abe, O., Hiraki, S., Fujikawa, Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.09.2006; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 72.80.Ey; 73.61.Ga; 78.30.Fs; 78.40.Fy; 81.15.-z; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Raman spectra; Electrical conductivity; Doping; Glass; Hall effect; XRD; Absorption spectra; Absorption coefficients; Plasma deposition
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200669650

Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 ∼ 300 °C using metallic Zn, metallic Ga and plasma‐excited oxygen as source materials. Deposited films were characterized by X‐ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm‐thick Ga‐doped ZnO films deposited at 290 °C showed low resistivity (∼2 × 10–4 Ω cm) and high transmittance in the visible region (∼85%). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)