Bi-stable toggle switching in magnetic tunnel junctions using sub-nanosecond Joule heat pulses

Abstract In this study, bi-stable toggle magnetization switching in magnetic tunnel junctions induced by electrically injected sub-nanosecond unipolar heat pulses was demonstrated. The switching probability of magnetization between bi-stable states was estimated by applying 0.5 ns voltage pulses and...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. 4; pp. 40905 - 40909
Main Authors Kaneda, Yuma, Goto, Minori, Mizuno, Tomohito, Yamane, Takekazu, Degawa, Naomichi, Suzuki, Tsuyoshi, Shimura, Atsushi, Aoki, Susumu, Urabe, Junichiro, Hara, Shinji, Nomura, Hikaru, Suzuki, Yoshishige
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.04.2022
Japanese Journal of Applied Physics
Subjects
Electrical junctions
Heat pulses
Induced magnetic anisotropy
joule heat
Magnetic switching
magnetic tunnel junction
Magnetization
magnetization switching
MTJ
Tunnel junctions
Voltage pulses
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Summary:Abstract In this study, bi-stable toggle magnetization switching in magnetic tunnel junctions induced by electrically injected sub-nanosecond unipolar heat pulses was demonstrated. The switching probability of magnetization between bi-stable states was estimated by applying 0.5 ns voltage pulses and measuring the perpendicular component of the magnetization direction. The maximum switching probability was approximately 70%, suggesting that bi-stable toggle magnetization switching was induced by the torque created by the Joule-heat-induced magnetic anisotropy change. Joule-heat-driven magnetization switching has the potential to become a fundamental technology for fast spin control.
Bibliography:JJAP-104024.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac4c4f