Additive effect of poly(4-vinylphenol) gate dielectric in organic thin film transistor at low temperature process

We fabricated pentacene-based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The solution of gate dielectrics is prepared by adding methylated poly[melamine-co-formaldehyde] (MMF) and photo-initiator (PI) [1-phenyl-2-hydroxy-2-methylpropane-1-one, D...

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Published inJournal of nanoscience and nanotechnology Vol. 13; no. 5; p. 3313
Main Authors Yun, Ho-Jin, Baek, Kyu-Ha, Do, Lee-Mi, Jeong, Kwang-Seok, Kim, Yu-Mi, Yang, Seung-Dong, Lee, Sang-Youl, Lee, Hi-Deok, Lee, Ga-Won
Format Journal Article
LanguageEnglish
Published United States 01.05.2013
Subjects
Equipment Design
Equipment Failure Analysis
Materials Testing
Membranes, Artificial
Nanoparticles - chemistry
Organic Chemicals - chemistry
Polyvinyls - chemistry
Transistors, Electronic
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Summary:We fabricated pentacene-based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The solution of gate dielectrics is prepared by adding methylated poly[melamine-co-formaldehyde] (MMF) and photo-initiator (PI) [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173@Ciba] to PVP By using a small amount (2.4 wt%) of PI, the cross-linking temperature is lowered to 90 degrees C, which is lower than general thermal curing reaction temperature for the cross-linked PVP (> 180 degrees C). The hysteresis and the leakage current of the OTFTs are also decreased by adding the MMF and PI in the PVP gate dielectric.
ISSN:1533-4880
DOI:10.1166/jnn.2013.7272