An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

• Published in: IEEE transactions on electron devices Vol. 59; no. 4; pp. 983 - 993
• Main Authors: Zaka, A., Palestri, P., Rafhay, Q., Clerc, R., Iellina, M., Rideau, D., Tavernier, C., Pananakakis, G., Jaouen, H., Selmi, L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2012; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Carrier-carrier scattering; channel hot electron injection (CHEI); Channels; Computational modeling; Computer simulation; Design. Technologies. Operation analysis. Testing; Devices; Distribution functions; Electric potential; Electronics; Engineering Sciences; Exact sciences and technology; full-band Monte Carlo (MC); Gates; Integrated circuits; Integrated circuits by function (including memories and processors); Logic gates; lucky electron model (LEM); Mathematical models; Micro and nanotechnologies; Microelectronics; Monte Carlo methods; Optical scattering; Phonons; Scattering; semi-analytic model; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Strontium; Transistors; Gate current; Carrier―carrier scattering; MOSFET; Optical phonon; semi-analytic model; Low voltage; Non volatile memory; Distribution function; Hot electron; Optical scattering; full-band Monte Carlo (MC); lucky electron model (LEM); Current density; MOS technology; Monte Carlo method; Electron scattering; Gate voltage; channel hot electron injection (CHEI); Electron injection; Group velocity; Charge carrier scattering; Flash memory; Integrated circuit; Analytical method; Numerical simulation; Drain voltage; Phonon scattering
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2183600

This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier-carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical nor flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths.