High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

• Published in: Nature communications Vol. 3; no. 1; p. 1011
• Main Authors: Kim, Sunkook, Konar, Aniruddha, Hwang, Wan-Sik, Lee, Jong Hak, Lee, Jiyoul, Yang, Jaehyun, Jung, Changhoon, Kim, Hyoungsub, Yoo, Ji-Beom, Choi, Jae-Young, Jin, Yong Wan, Lee, Sang Yoon, Jena, Debdeep, Choi, Woong, Kim, Kinam
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 21.08.2012; Nature Publishing Group
• Subjects: 639/301/119/1000; Humanities and Social Sciences; multidisciplinary; Science; Science (multidisciplinary)
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms2018

Unlike graphene, the existence of bandgaps (1–2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high- k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm 2  V −1  s −1 ), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors. Molybdenum disulphide offers some tantalizing advantages over graphene as a material with which to fabricate field-effect transistors. Kim et al . present a comprehensive study of field-effect transistors made from multilayer samples of MoS 2 and find that they can achieve high carrier mobilities.