TiO2 anatase thin films deposited by spray pyrolysis of an aerosol of titanium diisopropoxide

• Published in: Thin solid films Vol. 473; no. 1; pp. 68 - 73
• Main Authors: Conde-Gallardo, A., Guerrero, M., Castillo, N., Soto, A.B., Fragoso, R., Cabañas-Moreno, J.G.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.02.2005; Elsevier Science
• Subjects: Atomic force microscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Organometallic vapor deposition; Physics; Spray pyrolysis; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Synthesis and characterization; Titanium oxide; X-ray diffraction; Atomic force microscopy; Spray pyrolysis; Synthesis and characterization; X-ray diffraction; 77.84.Dy; 81.15.Rs; 82.33.Ya; Titanium oxide; Organometallic vapor deposition; Scanning electron microscopy; Inorganic compounds; Anatase; Interatomic forces; Spray coatings; Crystallization; Transition element compounds; XRD; Quartz; Substrates; Thin films; Titanium oxides; Silicon oxides; Scanning force microscopy; Aerosols; Reflection electron microscopy; 77.84.Dy Synthesis and characterization
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.07.010

Titanium dioxide thin films were deposited on crystalline silicon (100) and fused quartz substrates by spray pyrolysis (SP) of an aerosol, generated ultrasonically, of titanium diisopropoxide. The evolution of the crystallization, studied by X-ray diffraction (XRD), atomic force (AFM) and scanning electron microscopy (SEM), reflection and transmission spectroscopies, shows that the deposition process is nearly close to the classical chemical vapor deposition (CVD) technique, producing films with smooth surface and good crystalline properties. At deposition temperatures below 400 °C, the films grow in amorphous phase with a flat surface (roughness∼0.5 nm); while for equal or higher values to this temperature, the films develop a crystalline phase corresponding to the TiO2 anatase phase and the surface roughness is increased. After annealing at 750 °C, the samples deposited on Si show a transition to the rutile phase oriented in (111) direction, while for those films deposited on fused quartz no phase transition is observed.