High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures

The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enh...

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Published inJournal of nanoscience and nanotechnology Vol. 13; no. 6; p. 4325
Main Authors Kim, Seung Hwan, Park, Hyun Ho, Yang, Gye Mo, Lee, Sang Hern, Baek, Jong Hyub, Ha, Jun Seok, Song, Young Ho, Jeon, Seong Ran, Park, Hyung Jo
Format Journal Article
LanguageEnglish
Published United States 01.06.2013
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Summary:The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.
ISSN:1533-4880
DOI:10.1166/jnn.2013.7475