Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current dens...

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Bibliographic Details
Published inJournal of nanoscience and nanotechnology Vol. 13; no. 3; p. 1738
Main Authors Oh, S K, Song, C G, Jang, T, Kim, Kwang-Choong, Jo, Y J, Kwak, J S
Format Journal Article
LanguageEnglish
Published United States 01.03.2013
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Summary:This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.
ISSN:1533-4880
1533-4899
DOI:10.1166/jnn.2013.6987