An efficient multiband envelope function approximation method for spintronics

• Published in: Nanotechnology Vol. 14; no. 2; pp. 308 - 311
• Main Authors: Cartoixà, X, Ting, D Z-Y, McGill, T C
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Bristol IOP Publishing 01.02.2003; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; Band structure; Gallium antimonides; Semiconductor quantum wells; Theoretical study; Resonant tunnelling; Aluminium antimonides; Indium arsenides

We have developed an eight-band finite-difference envelope function approximation model capable of reproducing in almost all situations the true D(2d) or C(2v) symmetry of [001] grown zinc-blende heterostructures. We have used our model to study the relative contributions of the bulk inversion asymm...