An efficient multiband envelope function approximation method for spintronics

• Published in: Nanotechnology Vol. 14; no. 2; pp. 308 - 311
• Main Authors: Cartoixà, X, Ting, D Z-Y, McGill, T C
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Bristol IOP Publishing 01.02.2003; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; Band structure; Gallium antimonides; Semiconductor quantum wells; Theoretical study; Resonant tunnelling; Aluminium antimonides; Indium arsenides
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/14/2/340

We have developed an eight-band finite-difference envelope function approximation model capable of reproducing in almost all situations the true D(2d) or C(2v) symmetry of [001] grown zinc-blende heterostructures. We have used our model to study the relative contributions of the bulk inversion asymmetry (BIA) and structural inversion asymmetry to the spin splitting in the conduction band of asymmetric AlSb/GaSb/InAs/AlSb quantum wells, and clarify apparently contradictory statements about the relative magnitude of the two contributions. We show that, in the system under study, the inclusion of BIA effects changes considerably the angular dependence and the magnitude of the splitting. We also investigate how BIA changes the transmission properties of a resonant tunneling structure.