An efficient multiband envelope function approximation method for spintronics
We have developed an eight-band finite-difference envelope function approximation model capable of reproducing in almost all situations the true D(2d) or C(2v) symmetry of [001] grown zinc-blende heterostructures. We have used our model to study the relative contributions of the bulk inversion asymm...
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Published in | Nanotechnology Vol. 14; no. 2; pp. 308 - 311 |
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Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Bristol
IOP Publishing
01.02.2003
Institute of Physics |
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Abstract | We have developed an eight-band finite-difference envelope function approximation model capable of reproducing in almost all situations the true D(2d) or C(2v) symmetry of [001] grown zinc-blende heterostructures. We have used our model to study the relative contributions of the bulk inversion asymmetry (BIA) and structural inversion asymmetry to the spin splitting in the conduction band of asymmetric AlSb/GaSb/InAs/AlSb quantum wells, and clarify apparently contradictory statements about the relative magnitude of the two contributions. We show that, in the system under study, the inclusion of BIA effects changes considerably the angular dependence and the magnitude of the splitting. We also investigate how BIA changes the transmission properties of a resonant tunneling structure. |
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AbstractList | We have developed an eight-band finite-difference envelope function approximation model capable of reproducing in almost all situations the true D(2d) or C(2v) symmetry of [001] grown zinc-blende heterostructures. We have used our model to study the relative contributions of the bulk inversion asymmetry (BIA) and structural inversion asymmetry to the spin splitting in the conduction band of asymmetric AlSb/GaSb/InAs/AlSb quantum wells, and clarify apparently contradictory statements about the relative magnitude of the two contributions. We show that, in the system under study, the inclusion of BIA effects changes considerably the angular dependence and the magnitude of the splitting. We also investigate how BIA changes the transmission properties of a resonant tunneling structure. |
Author | Cartoixà, X McGill, T C Ting, D Z-Y |
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Cites_doi | 10.1103/PhysRevB.62.10364 10.1103/PhysRevB.41.7685 10.1103/PhysRevB.54.5675 10.1103/PhysRevB.31.8041 10.1103/PhysRevB.24.5693 10.1103/PhysRevB.50.10893 10.1103/PhysRevB.20.686 10.1063/1.367192 10.1103/PhysRevLett.60.728 10.1103/PhysRev.146.575 10.1103/PhysRevB.38.1806 10.1103/PhysRevLett.88.126601 10.1103/PhysRevB.63.205326 10.1103/PhysRevB.54.5852 10.1088/0022-3719/17/33/015 10.1103/PhysRev.97.869 10.1103/PhysRevB.38.10142 10.1023/A:1020796618175 10.1063/1.102730 10.1103/PhysRevB.58.15375 10.1016/0022-3697(57)90013-6 10.1103/PhysRevB.63.165303 10.1063/1.371872 10.1103/PhysRev.100.580 10.1103/PhysRevLett.77.1829 10.1103/PhysRevB.46.1921 10.1103/PhysRevB.59.R15583 10.1088/0268-1242/12/3/004 10.1023/A:1007764131406 10.1006/spmi.2002.1021 10.1038/45502 10.1103/PhysRevB.25.7584 10.1103/PhysRevB.48.8918 |
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Keywords | Band structure Gallium antimonides Semiconductor quantum wells Theoretical study Resonant tunnelling Aluminium antimonides Indium arsenides |
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SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states Surface states, band structure, electron density of states |
Title | An efficient multiband envelope function approximation method for spintronics |
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