Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air-bridged lateral epitaxial growth

• Published in: Physica status solidi. C no. 7; pp. 2116 - 2119
• Main Authors: Ishibashi, A., Sugahara, G., Kawaguchi, Y., Yamada, Y., Taguchi, T., Yokogawa, T.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.01.2003; WILEY‐VCH Verlag
• Subjects: 78.55.Cr; 78.67.De
• ISSN: 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200303491

We have systematically studied radiative and nonradiative recombination processes by time‐resolved photoluminescence (TR‐PL) measurements in InGaN based multiple quantum wells (MQWs) with various In content or Si doping conditions of barrier layers on low‐threading dislocaton (TD) density GaN films fabricated by $ \rm {\underline {a}ir-\underline {b}ridged \; \underline {l}ateral \; \underline {e}pitaxial \; \underline {g}rowth} $ (ABLEG). Temperature dependences of PL decay times and PL intensities indicate that the localization of photo‐excited carriers and the nonradiative recombination process are suppressed by using Si‐doped InGaN barriers in InGaN based MQWs on low TD density ABLEG‐GaN films.