Subcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETs

• Published in: IEEE transactions on electron devices Vol. 57; no. 4; pp. 772 - 781
• Main Authors: Zhu, Guojun, Zhou, Xing, Chin, Yoke-King, Pey, Kin Leong, Zhang, Junbin, See, Guan Huei, Lin, Shihuan, Yan, Yafei, Chen, Zuhui
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Ambipolar; Applied sciences; compact model; Curvature; Decision support systems; Devices; dopant-segregated Schottky (DSS); Dopants; drift-diffusion (DD); Electronics; Exact sciences and technology; gate-all-around (GAA); gate-induced drain leakage (GIDL); Leakage current; Logic gates; Mathematical analysis; Mathematical model; Mathematical models; MOSFET; MOSFETs; Nanowires; Numerical models; Schottky barrier (SB); Segregations; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; subcircuit; thermionic tunneling (TT); Thermionics; Transistors; unipolar; MOSFET; Ambipolar; gate-induced drain leakage (GIDL); Doping; Tunnel effect; Compact design; GAA transistor; subcircuit; unipolar; dopant-segregated Schottky (DSS); compact model; gate-all-around (GAA); Direct current; drift-diffusion (DD); Ambipolar diffusion; Analytical method; Numerical simulation; Leakage current; Nanowires; Impurity segregation; thermionic tunneling (TT); Drift mobility; Schottky barrier (SB); Schottky barrier
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2010.2041513

In this paper, we demonstrate analytical device models and a unique subcircuit approach to physically and accurately model the dopant-segregated Schottky (DSS) gate-all-around (GAA) Si-nanowire (SiNW) MOSFETs. The direct current characteristics of the DSS GAA SiNW MOSFETs are investigated through numerical simulations and fabricated devices. Transport mechanisms are studied and explained with numerical devices from ambipolar thermionic tunneling to unipolar drift-diffusion and a combination of both as the dopant segregation doping and thickness are varied. The convex curvature in the I ds - V ds characteristics is accurately reproduced by the subcircuit compact model, and it is shown for the first time that such a unique g ds -V ds characteristic in DSS devices is only feasible to be modeled by the subcircuit approach.