Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

• Published in: Current applied physics Vol. 11; no. 3; pp. 280 - 285
• Main Authors: Lee, Keun Woo, Kim, Kyung Min, Heo, Kon Yi, Park, Sung Kye, Lee, Seok Kiu, Kim, Hyun Jae
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2011; 한국물리학회
• Subjects: Antimony; carbon nanotubes; Devices; electrical properties; gallium; Illumination; Indium; lighting; Semiconductor devices; Single wall carbon nanotubes; Solution-based IGZO; SWNT dopant; TFTs; Thin film transistors; Transistors; ultraviolet radiation; UV light effect; zinc oxide; 물리학; UV light effect; Solution-based IGZO; SWNT dopant; TFTs
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2010.07.020

We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors ( SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron–hole pairs due to the UV light illumination.