Anisotropic crystalline organic step-flow growth on deactivated Si surfaces
We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B sqrt[3]×sqrt[3] R30° surface. With scanning probe microscopy and geometric modeling, we prove the quasiepit...
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| Published in | Physical review letters Vol. 110; no. 8; p. 086107 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
20.02.2013
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| Online Access | Get more information |
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| Summary: | We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B sqrt[3]×sqrt[3] R30° surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics. |
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| ISSN: | 1079-7114 |
| DOI: | 10.1103/physrevlett.110.086107 |